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| Silicon Schottky Diodes General-purpose diodes for high-speed switching q Circuit protection q Voltage clamping q High-level detecting and mixing Available with CECC quality assessment q BAS 40 ... ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAS 40 BAS 40-04 Marking 43s 44s Ordering Code Pin Configuration (tape and reel) Q62702-D339 Q62702-D980 Package1) SOT-23 BAS 40-05 45s Q62702-D979 BAS 40-06 46s Q62702-D978 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 5.91 BAS 40 ... General-purpose diodes for high-speed switching q Circuit protection q Voltage clamping q High-level detecting and mixing Available with CECC quality assessment q ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAS 40-07 Marking 47s Ordering Code Pin Configuration (tape and reel) Q62702-D1314 Package1) SOT-143 Maximum Ratings per Diode Parameter Reverse voltage Forward current Surge forward current, t 10 ms Total power dissipation BAS 40 TS 81 C BAS 40-04 ... TS 55 C Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction - ambient2) BAS 40 BAS 40-04 ... Junction - soldering point BAS 40 BAS 40-04 ... Rth JA Symbol VR IF IFSM Ptot Values 40 120 200 250 Unit V mA mW Tj Top Tstg 150 - 55 ... + 150 - 55 ... + 150 C K/W 345 515 275 375 Rth JS 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BAS 40 ... Electrical Characteristics per Diode at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Breakdown voltage IR = 10 A Reverse current VR = 30 V VR = 40 V Forward voltage IF = 1 mA IF = 10 mA IF = 40 mA Diode capacitance VR = 0, f = 1 MHz Charge carrier life time IF = 25 mA Differential forward resistance IF = 10 mA, f = 10 kHz V(BR) IR - - VF - - - CT rf - - - 310 450 720 4 - 10 380 500 1000 5 100 - pF ps - - 1 10 mV 40 - - V A Values typ. max. Unit Semiconductor Group 3 BAS 40 ... Characteristics per Diode at Tj = 25 C, unless otherwise specified. Forward current IF = f (VF) Reverse current IR = f (VR) Diode capacitance CT = f (VR) f= 1 MHz Differential forward resistance rf = f (IF) f= 10 kHz Semiconductor Group 4 BAS 40 ... Forward current IF = f (TA*; TS) * Package mounted on epoxy Semiconductor Group 5 |
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